X-On Electronics has gained recognition as a prominent supplier of D2219UK RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. D2219UK RF MOSFET Transistors are a product manufactured by TT Electronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

D2219UK TT Electronics

D2219UK electronic component of TT Electronics
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Part No.D2219UK
Manufacturer: TT Electronics
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Silicon DMOS RF FET 2.5W-12.5V-1GHz SE
Datasheet: D2219UK Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 28.3287
10 : USD 26.5129
50 : USD 25.4651
100 : USD 24.8221
N/A

Obsolete
0
MOQ : 100
Multiples : 100
100 : USD 40.5292
500 : USD 38.2337
1000 : USD 36.9255
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Pd - Power Dissipation
Maximum Operating Temperature
Brand
Drain Source Voltage Vds
Operating Frequency Min
Operating Frequency Max
Rf Transistor Case
No. Of Pins
Svhc
Operating Frequency Range
Transistor Type
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We are delighted to provide the D2219UK from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the D2219UK and other electronic components in the RF MOSFET Transistors category and beyond.

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TetraFET D2219UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A N GOLD METALLISED 8 1 MULTI-PURPOSE SILICON D 7 2 C B P 6 3 DMOS RF FET 5 4 2.5W 12.5V 1GHz SINGLE ENDED H K M L FEATURES J E SIMPLIFIED AMPLIFIER DESIGN FG SO8 PACKAGE SUITABLE FOR BROAD BAND APPLICATIONS PIN 1 SOURCE PIN 5 SOURCE PIN 2 DRAIN PIN 6 GATE VERY LOW C rss PIN 3 DRAIN PIN 7 GATE SIMPLE BIAS CIRCUITS PIN 4 SOURCE PIN 8 SOURCE Dim. mm Tol. Inches Tol. LOW NOISE A 4.06 0.08 0.160 0.003 B 5.08 0.08 0.200 0.003 HIGH GAIN 10 dB MINIMUM C 1.27 0.08 0.050 0.003 D 0.51 0.08 0.020 0.003 E 3.56 0.08 0.140 0.003 F 4.06 0.08 0.160 0.003 G 1.65 0.08 0.065 0.003 +0.25 +0.010 APPLICATIONS H 0.76 0.030 -0.00 -0.000 0.51 Min. 0.020 Min. HF/VHF/UHF COMMUNICATIONS J 1.02 Max. 0.040 Max. from 1 MHz to 1 GHz K 45 Max. 45 Max. 0 Min. 0 Min. L 7 Max. 7 Max. M 0.20 0.08 0.008 0.003 N 2.18 Max. 0.086 Max. P 4.57 0.08 0.180 0.003 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 17.5W D BV Drain Source Breakdown Voltage 40V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 2A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Document Number 6946 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Issue 1 E-mail: sales semelab.co.uk Website: D2219UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit DrainSource BV V = 0 I = 10mA 40 V DSS GS D Breakdown Voltage Zero Gate Voltage I V = 12.5V V = 0 1 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 A GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 15 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.2A 0.18 S fs DS D G Common Source Power Gain P = 2.5W 10 dB PS O Drain Efficiency V = 12.5V I = 0.1A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 C Input Capacitance V = 0V V = 5V f = 1MHz 12 pF iss DS GS C Output Capacitance V = 12.5V V = 0 f = 1MHz 10 pF oss DS GS C Reverse Transfer Capacitance V = 12.5V V = 0 f = 1MHz 1 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA R Thermal Resistance Junction Case Max. 10C / W THjcase Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Document Number 6946 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Issue 1 E-mail: sales semelab.co.uk Website:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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