RJ1P12BBDTLL ROHM

RJ1P12BBD Datasheet Nch 100V 120A Power MOSFET llOutline TO-263AB V 100V DSS R (Max.) 5.8m DS(on) LPT(L) I 120A D P 178W D llFeatures llInner circuit 1) Low on - resistance 2) High power small mold package 3) Pb-free lead plating RoHS compliant 4) UIS tested 5) Halogen free llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 330 Tape width (mm) 24 Type Quantity (pcs) 1000 Taping code TLL RJ1P12BBD Marking llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 100 V DSS *1 Continuous drain current V = 10V I 120 A GS D *2 I Pulsed drain current 240 A DP Gate - Source voltage V 20 V GSS *3 I Avalanche current, single pulse 40 A AS *3 E Avalanche energy, single pulse 125 mJ AS *1 Power dissipation P 178 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RJ1P12BBD Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 0.70 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 98.33 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 10 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 2.5mA 2.0 - 4.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -8.28 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 50A - 4.4 5.8 GS D Static drain - source *4 R m DS(on) on - state resistance V = 6.0V, I = 40A - 5.2 7.8 GS D R Gate resistance f = 1MHz, open drain - 2.6 - G Forward Transfer *4 Y V = 5V, I = 40A 30 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.10mH, V = 50V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.