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X-On Electronics has gained recognition as a prominent supplier of RJ1G12BGNTLL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJ1G12BGNTLL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJ1G12BGNTLL ROHM

RJ1G12BGNTLL electronic component of ROHM
RJ1G12BGNTLL ROHM
RJ1G12BGNTLL MOSFETs
RJ1G12BGNTLL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RJ1G12BGNTLL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 40V 120A POWER
Datasheet: RJ1G12BGNTLL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.3076 ea
Line Total: USD 5.31 
Availability - 64
Ship by Tue. 15 Apr to Thu. 17 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
64
Ship by Tue. 15 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 5.3076
10 : USD 3.5536
100 : USD 2.6598
500 : USD 2.4045
1000 : USD 2.3087

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RJ1G12BGNTLL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJ1G12BGNTLL and other electronic components in the MOSFETs category and beyond.

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RJ1G12BGN Datasheet Nch 40V 120A Power MOSFET llOutline TO-263AB V 40V DSS R (Max.) 1.86m DS(on) LPT(L) I 120A D P 178W D llFeatures llInner circuit 1) Low on - resistance 2) High power small mold package (LPTL) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% UIS tested llApplication llPackaging specifications Embossed Switching Packing Tape Basic ordering unit (pcs) 1000 Type Taping code TLL RJ1G12BGN Marking llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 V = 10V I Continuous drain current 120 A GS D *2 Pulsed drain current I 240 A DP V Gate - Source voltage 20 V GSS *3 Avalanche current, single pulse I 40 A AS *3 E Avalanche energy, single pulse 117 mJ AS *1 P Power dissipation 178 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170626 - Rev.003 RJ1G12BGN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 0.7 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 500 nA GSS GS DS V Gate threshold voltage V = V , I = 2mA 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 50A - 1.38 1.86 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 50A - 1.54 2.08 GS D R Gate resistance f = 1MHz, open drain - 1.2 - G Forward Transfer *4 Y V = 5V, I = 40A 60 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20170626 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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