RJ1L08CGNTLL ROHM

RJ1L08CGN Datasheet Nch 60V 80A Power MOSFET llOutline TO-263AB V 60V DSS R (Max.) 7.7m DS(on) LPT(L) I 80A D P 96W D llFeatures llInner circuit 1) Low on - resistance 2) High power small mold package 3) Pb-free lead plating RoHS compliant 4) 100% Rg and UIS tested 5) Halogen free llApplication llPackaging specifications Embossed Switching Packing Tape Power tool Reel size (mm) 330 Tape width (mm) 24 Type Quantity (pcs) 1000 Taping code TLL RJ1L08CGN Marking llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS *1 Continuous drain current V = 10V I 80 A GS D *2 I Pulsed drain current 160 A DP Gate - Source voltage V 20 V GSS *3 I Avalanche current, single pulse 37 A AS *3 E Avalanche energy, single pulse 52 mJ AS *1 Power dissipation P 96 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.004 RJ1L08CGN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 1.3 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 10 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 50A Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 80A - 5.3 7.7 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 40A - 7.4 10.7 GS D R Gate resistance f = 1MHz, open drain - 1.8 - G Forward Transfer *4 Y V = 5V, I = 40A 24 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.05mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.