RHU003N03FRA Datasheet Nch 30V 300mA Small Signal MOSFET llOutline SOT-323 V 30V DSS SC-70 R (Max.) 1.2 DS(on) UMT3 I 300mA D P 200mW D llFeatures llInner circuit 1) Very fast switching 2) Pb-free lead plating RoHS compliant. 3) AEC-Q101 Qualified llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code T106 Marking MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 300 mA D *1 I Pulsed drain current 1.2 A DP Gate - Source voltage V 20 V GSS *2 P Power dissipation 200 mW D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/5 2016 ROHM Co., Ltd. All rights reserved. 20160915 - Rev.001 RHU003N03FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 37.6 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 300mA - 0.8 1.2 GS D Static drain - source *3 R V = 4.5V, I = 300mA - 1.2 1.9 DS(on) GS D on - state resistance V = 4V, I = 300mA - 1.4 2.3 GS D Forward Transfer *3 Y V = 10V, I = 300mA 200 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/5 20160915 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.