RFD16N05LSM Product Preview MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m www.onsemi.com These are NChannel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization D of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V) driving sources in applications such as programmable controllers, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This G performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 V to 5 V range, thereby facilitating true onoff power control directly from S logic circuit supply voltages. Formerly developmental type TA09871. D Features G 16 A, 50 V S r = 0.047 DS(ON) DPAK UIS SOA Rating Curve (Single Pulse) TO252 CASE 369AS Design Optimized for 5 V Gate Drives Can be Driven Directly from CMOS, NMOS, TTL Circuits SOA is Power Dissipation Limited MARKING DIAGRAM Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Y&Z&3&K Majority Carrier Device RFD16N 05LSM Related Literature TB334 Guidelines for Soldering Surface Mount Components to PC Boards &Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code RFD16N05LSM = Specific Device Code ORDERING INFORMATION Part Number Package Brand RFD16N05LSM9A TO252AA RFD16N05LSM Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: May, 2019 Rev. 2 RFD16N05LSM/DRFD16N05LSM MAXIMUM RATINGS Rating Symbol RFD16N05LSM9A Units Drain to Source Voltage (Note 1) V 50 V DS Drain to Gate Voltage (R 20 k ) (Note 1) V 50 V GS DGR Continuous Drain Current I 16 A D Pulsed Drain Current (Note 3) I 45 A DM Gate to Source Voltage V 10 V GS Maximum Power Dissipation P 60 W D Derate Above 25C 0.48 W/C Operating and Storage Temperature T , T 55 to 150 C J STG Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s T 300 C L Package Body for 10 s, See Techbrief 334 T 260 C pkg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. T = 25C to 125C. J ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV I = 250 mA, V = 0 V, Figure 10 50 - - V DSS D GS Gate to Threshold Voltage V V = V , I = 250 A, Figure 9 1 2 V GS(TH) GS DS D Zero Gate Voltage Drain Current I V = 40 V, V = 0 V 1 A DSS DS GS T = 150 C C 50 A Gate to Source Leakage Current I V = 10 V, V = 0 V 100 nA GSS GS DS Drain to Source On Resistance (Note 2) r I = 16 A, V = 5 V 0.047 DS(ON) D GS I = 16 A, V = 4 V 0.056 D GS TurnOn Time t V = 25 V, I = 8 A, V 5 V, 60 ns (ON) DD D GS = R = 12.5 GS TurnOn Delay Time t 14 ns d(ON) Figures 15, 16 Rise Time t 30 ns r TurnOff Delay Time t 42 ns d(OFF) Fall Time t 14 ns f TurnOff Time t ns (OFF) Total Gate Charge Q V = 0 V to 10 V V = 40 V, 80 nC g(TOT) GS DD I = 16 A, D Gate Charge at 5 V Q V = 0 V to 5 V 45 nC g(5) GS R = 2.5 L Figures 17, 18 Threshold Gate Charge Q V = 0 V to 1 V 3 nC g(TH) GS Thermal Resistance Junction to Case R 2.083 C/W JC Thermal Resistance Junction to Ambient R 100 C/W JA SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V I = 16 A 1.5 V - - SD SD Diode Reverse Recovery Time t I = 16 A, dI /dt = 100 A/ s - - 125 ns rr SD SD 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2 . 3. Repetitive Rating: Pulse Width limited by max junction temperature. www.onsemi.com 2