RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using r = 0.047 DS(ON) the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding Temperature Compensating PSPICE Model performance. They were designed for use in applications Peak Current vs Pulse Width Curve such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated UIS Rating Curve directly from integrated circuits. Related Literature These transistors incorporate ESD protection and are - TB334 Guidelines for Soldering Surface Mount designed to withstand 2kV (Human Body Model) of ESD. Components to PC Boards Formerly developmental type TA49027. Symbol D Ordering Information PART NUMBER PACKAGE BRAND G RFP30N06LE TO-220AB P30N06LE RF1S30N06LESM TO-263AB 1S30N06L NOTE: When ordering use the entire part number. Add suffix, 9A, to S obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN GATE (FLANGE) DRAIN (FLANGE) SOURCE 2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1RFP30N06LE, RF1S30N06LESM o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified A RFP30N06LE, RF1S30N06LESM UNITS Drain to Source Voltage (Note 1) . V 60 V DSS Drain to Gate Voltage (R = 20k) (Note 1) V 60 V GS DGR Gate to Source Voltage . V +10, -8 V GS Continuous Drain Current .I 30 A D Pulsed Drain Current (Note 3) I Refer to Peak Current Curve DM Pulsed Avalanche Rating E Refer to UIS Curve AS Power Dissipation P 96 W D o o Derate Above 25 C . 0.645 W/ C Electrostatic Discharge Rating, MIL-STD-883, Category B(2) ESD 2 kV o Operating and Storage Temperature . T , T -55 to 175 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s T 300 C L o Package Body for 10s, See Techbrief 334 T 260 C pkg CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: o o 1. T = 25 C to 150 C. J o Electrical Specifications T = 25 C, Unless Otherwise Specified C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV I = 250 A, V = 0V, Figure 11 60 - - V DSS D GS Gate to Threshold Voltage V V = V , I = 250 A, Figure 10 1 - 2 V GS(TH) GS DS D Zero Gate Voltage Drain Current I V = Rated B , V = 0 - - 25 A DSS DS VDSS GS o V = 0.8 x Rated B , V = 0, T = 150C- - 250 A DS VDSS GS C Gate to Source Leakage Current I V = +10, -8V - - 10 A GSS GS Drain to Source On Resistance (Note 2) r I = 30A, V = 5V, Figure 9 - - 0.047 DS(ON) D GS Turn-On Time t V = 30V, I = 30A, R = 1 , V = 5V, -- 140 ns ON DD D L GS R = 2.5, GS Turn-On Delay Time t -11 - ns d(ON) Figures 13, 16, 17 Rise Time t -88 - ns r Turn-Off Delay Time t -30 - ns d(OFF) Fall Time t -40 - ns f Turn-Off Time t -- 100 ns OFF Total Gate Charge Q V = 0V to 10V V = 48V, -51 62 nC g(TOT) GS DD I = 30A, D Gate Charge at 5V Q V = 0V to 5V - 28 34 nC g(5) GS R = 1.6 L Threshold Gate Charge Q V = 0V to 1V - 1.8 2.6 nC Figures 18, 19 g(TH) GS Input Capacitance C V = 25V, V = 0V, - 1350 - pF ISS DS GS f = 1MHz Output Capacitance C - 290 - pF OSS Figure 12 Reverse Transfer Capacitance C -85 - pF RSS o Thermal Resistance Junction to Case R - - 1.55 C/W JC o Thermal Resistance Junction to Ambient R -- 80 C/W JA Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V I = 30A - - 1.5 V SD SD Diode Reverse Recovery Time t I = 30A, dI /dt = 100A/s- -125ns rr SD SD NOTES: 2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). 2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1