MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket650V CoolMOS C7 Power Transistor IPZ65R095C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability. Features Increased MOSFET dv/dt ruggedness Better efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g Best in class RDS(on) /package Easy to use/drive due to driver source pin for better control of the gate. Pb-free plating, halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Benefits Enabling higher system efficiency Enabling higher frequency / increased power density solutions System cost / size savings due to reduced cooling requirements Higher system reliability due to lower operating temperatures Applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Please note: The source and sense source pins are not exchangeable. Their exchange might lead to malfunction. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 700 V RDS(on),max 95 m Q 45 nC g.typ I 100 A D,pulse E 400V 5.5 J oss Body diode di/dt 60 A/s Type / Ordering Code Package Marking Related Links IPZ65R095C7 PG-TO 247-4 65C7095 see Appendix A Final Data Sheet 2 Rev. 2.0, 2013-10-11