IPZ60R017C7 MOSFET PG-TO 247-4 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with R *A below 1Ohm*mm. DS(on) Features Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns Drain Pin 1 Increased efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g Best in class R /package DS(on) Easy to use/drive Gate Pin 4 Pb-free plating, halogen free mold compound Driver Qualified for industrial grade applications according to JEDEC (J-STD20 Source Power Pin 3 and JESD22) Source Pin 2 4pin kelvin source concept Benefits Increased economies of scale by use in PFC and PWM topologies in the application Higher dv/dt limit enables faster switching leading to higher efficiency Enabling higher system efficiency by lower switching losses Increased power density solutions due to smaller packages Suitable for applications such as server, telecom and solar Up to 0.5% better full load efficiency 100kHz compared to conventional 3pin package Applications PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 17 m DS(on),max Q 240 nC g.typ I 495 A D,pulse ID,continuous Tj<150C 129 A E 400V 30 J oss Body diode di/dt 200 A/s Type / Ordering Code Package Marking Related Links IPZ60R017C7 PG-TO 247-4 60C7017 see Appendix A Final Data Sheet 1 Rev. 2.0, 2016-03-01600V CoolMOS C7 Power Transistor IPZ60R017C7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2016-03-01