RF051VA2STR ROHM

RF051VA2S Diodes Fast recovery diode RF051VA2S z Applications z Dimensions (Unit : mm) z Land size figure (Unit : mm) High speed switching 1.1 0.170.1 0.05 1.30.05 z Features 1) Small mold type (TUMD2) 2) Ultra high switching speed 3) High reliability. TUMD2 z Constructure Silicon epitaxial planar z Constructure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day z Taping dimensions (Unit : mm) 1.550.1 0.250.05 4.00.1 2.00.05 0 4.00.1 1.00.2 1.430.05 0 0.90.08 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 200 V RM Reverse voltage (DC) V 200 V R Average rectified forward current 0.5 Io A Forward current surge peak 60Hz1cyc I 5 A FSM Junction temperature 150 Tj Storage temperature -55 to +150 Tstg z Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V Forward voltage - - 0.98 V I =0.5A F F Reverse current I -- 10 A V =200V R R I =0.5A,I =1A,Irr=0.25*IR Reverse recovery time trr - - 25 ns F R 1/3 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 0.8 0.5 2.0RF051VA2S Diodes z Electrical characteristic curves 1000000 100 Ta=125 1000 Ta=150 f=1MHz Ta=125 100000 100 Ta=150 Ta=75 10000 10 10 Ta=75 Ta=-25 Ta=25 1 1000 0.1 100 1 Ta=25 Ta=-25 0.01 10 0.001 1 0.1 0 200 400 600 800 1000 0 50 100 150 200 0 102030 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 890 10 1000 Ta=25 9 fT=1MHa=25z 900 Ta=25 IF=0.5A f=1MHz VR=0V 880 VR=200V 8 n=30pcs 800 VR=0V n=30pcs 7 700 n=10pcs 6 870 600 5 500 4 860 400 AVE:516.3nA 3 300 ave=3.68pF AVE:861.0mV 850 2 AVE:3.13pF 200 1 100 0 840 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 50 100 45 Ta=25 Ifsm 25 IF=0.5A 40 Ifsm 1cyc IR=1A 8.3ms 8.3ms 35 Irr=0.25*IR 20 10 1cyc n=10pcs 30 8.3ms 25 15 20 10 1 15 AVE:6.50A 10 5 AVE8.6ns 5 0.1 0 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 100 1 1000 DC IM=1mA IF=10mA 0.8 Ifsm D=1/2 1ms tim t Rth(j-a) 10 300us 0.6 Sin(180) 100 0.4 1 Rth(j-c) 0.2 0.1 0 10 110 100 00.5 1 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2/3 PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IF(A) FORWARD CURRENT:IFSM(A) REVERSE CURRENT:IR(nA) TRANSIENT RESERVE RECOVERY TIME:trr(us) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)