RF2001T4S ROHM

Data Sheet Fast recovery diode RF2001T4S Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 10.00.3 Features 0.1 0.1 (1) (2) (3) 1) High reliability. (TO-220) 2) Low noise. 3) Very fast switching . Construction Silicon epitaxial planar 1.2 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : TO220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 430 V RM Reverse voltage (DC) V 400 V R Average rectified forward current (*1) 20 Io A Forward current surge peak (60Hz/1cyc)(*1) 100 I A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C (*1)Business frequency, Rating of R-load, Tc=94 CMAX. Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 1.6 V I =20A F F Reverse current I -- 10 A V =400V R R Reverse recovery time trr - - 30 ns IF=0.5A,IR=1A Irr=0.25*IR www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.B 1/3 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RF2001T4S Electrical characteristics curves 100 1000000 1000 Ta=150 C Ta=75 C Ta=125 C f=1MHz Ta=125 C 100000 10 10000 Ta=25 C Ta=150 C Ta=75 C Ta=-25 C 1 1000 100 Ta=25 C 100 0.1 Ta=-25 C 10 1 0.01 10 0 50 100 150 200 250 300 350 400 450 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 30 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) F R R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 500 500 1600 Ta=25 C Ta=25 C 450 Ta=25 C f=1MHz I =20A F V =400V 480 R V =0V R 400 n=20pcs n=20pcs n=10pcs 350 1500 460 300 250 440 200 AVE:442.1pF 1400 150 AVE:55.8nA 420 100 AVE:1399mV 50 400 0 1300 V DISPERSION MAP F I DISPERSION MAP R Ct DISPERSION MAP 1000 30 300 Ta=25 C Ifsm Ifsm 1cyc I =0.5A F 25 250 I =1A R 8.3ms 8.3ms Irr=0.25*I R 8.3ms 100 20 200 n=10pcs 1cyc AVE:22.6ns AVE:236.0A 15 150 10 10 100 5 50 0 1 0 110 100 NUMBER OF CYCLES trr DISPERSION MAP I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 1000 100 50 D=1/2 IM=100mA 45 I =1A F Ifsm DC t 40 Sin(=180) 1ms Rth(j-a) time 35 10 300us 30 100 25 20 Rth(j-c) 1 15 10 5 10 0 0.1 0.1 1 10 100 0 10 203040 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) I -t CHARACTERISTICS FSM AVERAGE RECTIFIED Rth-t CHARACTERISTICS FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (nA) TRANSIENT R REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN TERMINALS:Ct(pF) PEAK SURGE TERMINALS:Ct(pF) FORWARD POWER FORWARD CURRENT:I (A) FSM DISSIPATION:Pf(W)