RF071M2STR ROHM

Data Sheet Fast Recovery Diode RF071M2S Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 Features 1)Small power mold type.(PMDU) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss PMDU Construction Silicon epitaxial planer Structure 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping dimensions (Unit : mm) 0.250.05 1.550.05 2.00.05 4.00.1 1.810.1 4.00.1 1.00.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 200 RM V Reverse voltage (DC) V 200 V R I Forward currentDC 1 A F Average rectified forward current (*1) Io 0.7 A Forward current surge peak (60Hz1cyc) I 15 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C (*1)Mounted on epoxy board. 180Half sine wave Electrical characteristics(Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - 0.79 0.85 V I =0.7A F F I Reverse current - 0.01 10 AV =200V R R Reverse recovery time -12 25 ns I =0.5A,I =1A,Irr=0.25*I trr F R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.E 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05RF071M2S Data Sheet 100 Ta=150 1 10000 Ta=125 f=1Mf=1MHz Hz 1000 Ta=150 Ta=75 0.1 100 Ta=125 Ta=25 10 10 Ta=75 Ta=-25 0.01 1 Ta=25 0.1 Ta=-25 0.01 0.001 1 0 50 100 150 200 0 100 200 300 400 500 600 700 800 900 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 820 100 100 Ta=25 Ta=25 Ta=25 90 90 VR=200V f=1MHz IF=0.7A 810 80 n=30pcs 80 VR=0V n=30pcs n=10pcs 70 70 800 60 60 50 50 790 40 40 AVE:11.1nA 30 30 AVE:37.0pF AVE:795.7mV 780 20 20 10 10 0 770 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 1000 Ta=25 Ifsm IF=0.5A 25 1cyc Ifsm IR=1A 150 8.3ms 8.3ms Irr=0.25*IR 20 100 8.3ms n=10pcs 1cyc 100 15 10 10 AVE:12.2ns 50 AVE:63.0A 5 0 0 1 1 10 100 trr DISPERSION MAP IFSM DISRESION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 1000 1 IM=10mA IF=0.5A Rth(j-a) Ifsm t DC 0.8 time 100 1ms D=1/2 100 300us 0.6 Sin(180) 10 Rth(j-c) 0.4 10 1 0.2 0.1 1 0 0.001 0.01 0.1 1 10 100 1000 1 10 100 00.511.5 TIME:t(s) TIME:t(ms) AVERAGE RECTIFIED Rth-t CHARACTERISTICS IFSM-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.E PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(nA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)