RF051UA1DTR ROHM

RF051UA1D Diodes Fast recovery diode RF051UA1D z Applications z External dimensions (Unit : mm) z Land size figure (Unit : mm) General rectification 1.9 2.90.1 0.95 0.95 0.1 0.4 0.160.1 Each lead has same dimension 0.05 0.06 z Features (6) (5) (4) 0.45 0.35 0.35 0.45 1) Small power mold type. (TSMD6) 2) Very fast recovery. 3) High reliability 00.1 0.8 0.7 TSMD6 0.330.03 (1) (2) (3) 0.70.1 0.95 0.95 z Construction 0.850.1 1.90.2 1.0Max Silicon epitaxial planar z Structure ROHM : TSMD6 dot (year week factory) + day z Taping specifications(Unit : mm) 1.550.1 4.00.1 2.00.05 0 0.30.1 1.10.1 3.20.08 4.00.1 1.10.08 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repatitive peak) V 100 V RM Reverse voltage (DC) V 100 V R Average rectified forward current (*1) 0.5 Io A Forward current surge peak 60Hz1cyc I 5 A FSM Junction temperature Tj 150 Storage temperature -55 to +150 Tstg (*1) Rating for a per diode z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.98 V I =0.5A F F Reverse current I -- 10 A V =100V R R Reverse recovery time - - 25 ns I =0.5A,I =1A,Irr=0.25*I trr F R R 1/3 0.2 1.6 0.1 2.80.2 0.30.6 3.20.08 5.50.2 1.0 min. 00.5 3.50.05 1.750.1 8.00.2 3.20.08 2.4RF051UA1D Diodes z Electrical characteristic curves (Ta=25C) 1 Ta=150 1000000 10 f=1MHz f=1MHz Ta=75 100000 Ta=125 Ta=25 0.1 10000 Ta=75 Ta=125 Ta=-25 1000 Ta=150 Ta=25 0.01 100 Ta=-25 10 1 0.001 1 0 2040 6080 100 0 200 400 600 800 1000 1200 0 102030 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 910 10 1000 Ta=25 Ta=25 9 900 Ta=25 IF=0.5A VR=100V 900 f=1MHz 8 800 n=30pcs n=30pcs VR=0V 7 700 n=10pcs 890 6 600 500 5 880 400 4 300 3 AVE:880.2mV AVE:147.6nA 870 200 2 AVE:3.13pF 100 1 860 0 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 1000 50 30 Ta=25 45 IF=0.5A 25 40 IR=1A Ifsm Ifsm 1cyc Irr=0.25*IR 35 100 20 n=10pcs 8.3ms 8.3ms 30 8.3ms 1cyc 25 15 20 10 AVE:5.30ns 10 15 10 5 5 AVE:11.6A 0 0 1 110 100 trr DISPERSION MAP IFSM DISRESION MAP NUMBER OF CYCLES Mounted on epoxy board IFSM-CYCLE CHARACTERISTICS IM=10mA IF=0.1A 1000 1000 1 Per chip time Rth(j-a) 1ms DC 0.8 Ifsm 300us t D=1/2 100 100 0.6 Rth(j-c) Sin(180) 0.4 10 10 0.2 1 1 0 1 10 100 0.001 0.01 0.1 1 10 100 1000 00.5 1 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2/3 PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IF(A) FORWARD CURRENT:IFSM(A) REVERSE CURRENT:IR(nA) TRANSIENT RESERVE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)