X-On Electronics has gained recognition as a prominent supplier of RD3G600GNTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3G600GNTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3G600GNTL ROHM

RD3G600GNTL electronic component of ROHM
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Part No.RD3G600GNTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 40V 60A POWER
Datasheet: RD3G600GNTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.705 ea
Line Total: USD 1.7 
Availability - 2734
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2734
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.705
10 : USD 1.408
100 : USD 1.0549
500 : USD 0.8866
1000 : USD 0.8866
2500 : USD 0.8646
5000 : USD 0.8525
10000 : USD 0.8514

   
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We are delighted to provide the RD3G600GNTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3G600GNTL and other electronic components in the MOSFETs category and beyond.

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RD3G600GN Datasheet Nch 40V 60A Power MOSFET llOutline V 40V DSS DPAK R (Max.) 3.6m DS(on) TO-252 I 60A D P 40W D llInner circuit llFeatures 1) Low on - resistance 2) High power package (TO-252) 3) Pb-free plating RoHS compliant 4) Halogen free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Quantity (pcs) 2500 Taping code TL Marking RD3G600GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 I Continuous drain current 60 A D *2 I Pulsed drain current 120 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 60 A AS *3 E Avalanche energy, single pulse 70 mJ AS *1 P Power dissipation 40 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20191223 - Rev.003 RD3G600GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.1 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 500 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 60A - 2.8 3.6 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 60A - 3.3 4.3 GS D R Gate resistance f = 1MHz, open drain - 2.0 - G Forward Transfer *4 Y V = 5V, I = 30A 30 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.02mH, V = 32V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20191223 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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