DMC3025LDV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
Low On-Resistance
I max
D
Device BV R max
DSS DS(ON)
T = +25C Low Input Capacitance
C
Fast Switching Speed
25m @ V = 10V 15A
GS
Q1 30V
Low Input/Output Leakage
12.5A
35m @ VGS = 4.5V
Complementary Pair MOSFET
-15A
25m @ V = -10V
GS
Q2 -30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
-12A
38m @ V = -4.5V
GS
Halogen and Antimony Free. Green Device (Note 3)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
Case: PowerDI3333-8 (Type UXC)
resistance (R ) and yet maintain superior switching performance,
DS(ON)
Case Material: Molded Plastic, Green Molding Compound.
making it ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Power Management Functions
Solderable per MIL-STD-202, Method 208
Analog Switch
Weight: 0.072 grams (Approximate)
Equivalent Circuit
PowerDI3333-8 (Type UXC)
D2
D1
D1
D1
D2
D2
G2
G1
S1
G1
S2
G2
PIN1
S2
S1
Top View Bottom View N-Channel MOSFET P-Channel MOSFET
Ordering Information (Note 4)
Part Number Case Packaging
DMC3025LDV-7 PowerDI3333-8 (Type UXC) 2000/Tape & Reel
DMC3025LDV-13 PowerDI3333-8 (Type UXC) 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC3025LDV
Maximum Ratings Q1 N-CHANNEL (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 15
C
Continuous Drain Current, V = 10V (Note 7) I A
GS D
State 12
T = +70C
C
Maximum Body Diode Forward Current (Note 6) I A
S
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 55 A
I
DM
Avalanche Current (L = 0.1mH) (Note 8) 14 A
I
AS
Avalanche Energy (L = 0.1mH) (Note 8) 9.8 mJ
E
AS
Maximum Ratings Q2 P-CHANNEL (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage -30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C -15
C
Continuous Drain Current, V = -10V (Note 7) I A
GS D
State -12
T = +70C
C
Maximum Body Diode Forward Current (Note 6) I A
S
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -45 A
I
DM
Avalanche Current (L = 0.1mH) (Note 8) -22 A
I
AS
Avalanche Energy (L = 0.1mH) (Note 8) 24 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 1.0 W
P
D
Steady State 119
Thermal Resistance, Junction to Ambient (Note 5) R C/W
JA
t<10s 72
Total Power Dissipation (Note 6) 1.9 W
P
D
Steady State 66
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 38 C/W
Thermal Resistance, Junction to Case (Note 7) 15
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
PowerDI is a registered trademark of Diodes Incorporated.
2 of 10
DMC3025LDV July 2016
Diodes Incorporated
www.diodes.com
Document number: DS38937 Rev. 1 - 2