R6076MNZ1 Datasheet Nch 600V 76A Power MOSFET llOutline V 600V DSS R (Max.) 0.055 DS(on) TO-247 I 76A D P 740W D llInner circuit llFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (V ) guaranteed to GSS be 30V. 5) Drive circuits can be simple. 6) Pb-free plating RoHS compliant llPackaging specifications Packing Tube Reel size (mm) - llApplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 450 Taping code C9 Marking R6076MNZ1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 76 A c D *2 I Pulsed drain current 228 A DP Gate - Source voltage V 30 V GSS *4 I Avalanche current, single pulse 16 A AS *4 E Avalanche energy, single pulse 68.7 mJ AS Power dissipation (T = 25C) P 740 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170605 - Rev.003 Obsolete R6076MNZ1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 0.168 /W thJC R Thermal resistance, junction - ambient - - 30 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - - j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3.0 - 5.0 V GS(th) DS D V = 10V, I = 38A GS D Static drain - source *3 R T = 25C - 0.040 0.055 DS(on) j on - state resistance T = 125C - - - j Gate resistance R f = 1MHz, open drain - 0.5 - G www.rohm.com 2/11 20170605 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. Obsolete