X-On Electronics has gained recognition as a prominent supplier of IXFN26N100P Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. IXFN26N100P Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

IXFN26N100P IXYS

IXFN26N100P electronic component of IXYS
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Part No.IXFN26N100P
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds
Datasheet: IXFN26N100P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 62.664 ea
Line Total: USD 62.66 
Availability - 5
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 IXFN26N100P More Buying Options & Price Grid(s)

Availability Price Quantity
5
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 62.664

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Configuration
Height
Length
Transistor Type
Width
Brand
Number Of Channels
Transistor Polarity
Channel Mode
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Subcategory
Tradename
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXFN26N100P from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFN26N100P and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

The IXFN26N100P is an insulated-gate bipolar transistor (IGBT) module from IXYS Corporation. The high-current module operates with a maximum collector current at 100 amperes and a maximum collector-emitter voltage of 600 volts. It is designed for use in high-efficiency motor control, power supply, frequency drive, and automotive applications.

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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