TM HiPerRF V = 1000V IXFH6N100F DSS I = 6A Power MOSFETs IXFT6N100F D25 R 1.9 F-Class: MegaHertz Switching DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g Intrinsic R , High dV/dt, Low t TO-247 (IXFH) g rr Symbol Test Conditions Maximum Ratings TAB V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 20 V GSS TO-268 (IXFT) V Transient 30 V GSM I T = 25C6A D25 C I T = 25C, Pulse Width Limited by T 24 A DM C JM G I T = 25C6A S AR C E T = 25C 700 mJ TAB AS C dV/dt I I , di/dt < 100A/ s, V V 5 V/ns S DM DD DSS G = Gate D = Drain T 150C, R = 2 S = Source TAB = Drain J G P T = 25C 180 W D C Features T -55 ... +150 C J T 150 C z JM RF capable MOSFETs z Double metal process for low gate T -55 ... +150 C stg resistance T Maximum Lead Temperature for Soldering 300 C z L Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) T Plastic Body for 10s 260 C SOLD rated M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. z d Low package inductance - easy to drive and to protect Weight TO-247 6 g z TO-268 4 g Fast intrinsic rectifier Applications z DC-DC converters z Symbol Test Conditions Characteristic Values Switched-mode and resonant-mode (T = 25C, Unless Otherwise Specified) Min. Typ. Max. power supplies, >500kHz switching J z DC choppers BV V = 0V, I = 500A 1000 V DSS GS D z 13.5 MHz industrial applications z Pulse generation V V = V , I = 2.5mA 3.0 5.5 V GS(th) DS GS D z Laser drivers z I V = 20V, V = 0V 100 nA RF amplifiers GSS GS DS I V = V 50 A Advantages DSS DS DSS V = 0V T = 125C 1 mA GS J z Space savings R V = 10V, I = 0.5 I , Note 1 1.9 z DS(on) GS D D25 High power density 2001 IXYS CORPORATION, All Rights Reserved DS98732A(08/01)IXFH6N100F IXFT6N100F Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. TO-247 (IXFH) Outline J g V = 10V, I = 0.5 I , Note 1 3.0 5.5 S fs DS D D25 C 1770 pF iss C V = 0V, V = 25V, f = 1MHz 186 pF oss GS DS P C 53 pF rss t 11.0 ns d(on) Resistive Switching Times t 8.6 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 21.0 ns d(off) R = 2 (External) G t 8.3 ns e f Dim. Millimeter Inches Q 54 nC g(on) Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 0.5 I 14 nC A 4.7 5.3 .185 .209 gs GS DS DSS D D25 A 2.2 2.54 .087 .102 1 Q 27 nC gd A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 R 0.65 C/W thJC b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 R (TO-247) 0.21 C/W 2 thCS C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode Characteristic Values L1 4.50 .177 T = 25C unless otherwise specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 6 A S GS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I Repetitive, pulse width limited by T 24 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS TO-268 Outline 250 ns t I = 6A, -di/dt = 100A/s rr F Q 0.6 C RM V = 100V, V = 0V R GS I 4.0 A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % Min Recommended Footprint IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537