Preliminary Technical Information TM TM Polar3 HiperFET V = 500V IXFP20N50P3M DSS Power MOSFET I = 8A D25 R 300m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier OVERMOLDED Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS V Continuous 30 V G GSS D S V Transient 40 V GSM I T = 25 C 8 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 40 A DM C JM S = Source I T = 25 C10 A A C E T = 25 C 300 mJ AS C dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J P T = 25 C58 W D C Features T -55 ... +150 C J Plastic Overmolded Tab for Electrical T 150 C JM Isolation T -55 ... +150 C Fast Intrinsic Rectifier stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Low R and Q DS(ON) G T Plastic Body for 10s 260 C SOLD Low Package Inductance M Mounting Torque 1.13 / 10 Nm/lb.in d Weight 2.5 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 500 V DSS GS D Switch-Mode and Resonant-Mode V V = V , I = 1.5mA 3.0 5.0 V GS(th) DS GS D Power Supplies DC-DC Converters I V = 30V, V = 0V 100 nA GSS GS DS Laser Drivers I V = V , V = 0V 25 A AC and DC Motor Drives DSS DS DSS GS Robotics and Servo Controls T = 125C 1.25 mA J R V = 10V, I = 10A, Note 1 300 m DS(on) GS D 2013 IXYS CORPORATION, All Rights Reserved DS100415A(11/13)IXFP20N50P3M Symbol Test Conditions Characteristic Values ISOLATED TO-220 (IXFP...M) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 10A, Note 1 11 18 S fs DS D C 1800 pF iss C V = 0V, V = 25V, f = 1MHz 230 pF oss GS DS C 8.3 pF rss R Gate Input Resistance 2.3 12 3 Gi t 10 ns d(on) Resistive Switching Times t 5 ns r V = 10V, V = 0.5 V , I = 10A GS DS DSS D t 43 ns d(off) R = 5 (External) G t 9 ns f Q 36 nC g(on) Q V = 10V, V = 0.5 V , I = 10A 7 nC gs GS DS DSS D Q 13 nC gd Terminals: 1 - Gate R 2.15 C/W 2 - Drain thJC 3 - Source Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 20 A S GS I Repetitive, Pulse Width Limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 10A, -di/dt = 100A/ s F I 8.0 A RM V = 100V, V = 0V R GS Q 0.6 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537