X-On Electronics has gained recognition as a prominent supplier of QH8K22TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QH8K22TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QH8K22TCR ROHM

QH8K22TCR electronic component of ROHM
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See Product Specifications
Part No.QH8K22TCR
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 40V 6.5A (Ta) 1.1W (Ta) Surface Mount TSMT8
Datasheet: QH8K22TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6612 ea
Line Total: USD 0.66 
Availability - 436
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
436
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6612
10 : USD 0.6141
100 : USD 0.4243
500 : USD 0.3496
1000 : USD 0.3139
3000 : USD 0.2829
6000 : USD 0.2691
9000 : USD 0.2588

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the QH8K22TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QH8K22TCR and other electronic components in the MOSFETs category and beyond.

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QH8K22 Datasheet 40V Nch+Nch Small Signal MOSFET llOutline V 40V DSS R (Max.) 46m DS(on) TSMT8 I 6.5A D P 2.5W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TCR Marking K22 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 I Continuous drain current 6.5 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 4.5 A AS *3 E Avalanche energy, single pulse 1.6 mJ AS *1 P 2.5 D *4 P Power dissipation (total) 1.5 W D *5 P 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20170612 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. QH8K22 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 83.3 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 113 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 26.2 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 100 nA GSS DS GS leakage current Gate threshold V V = V , I = 10A 1.0 - 2.5 V GS(th) DS GS D voltage V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 6.5A - 35 46 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 4.5A - 44 59 GS D Gate resistance R f = 1MHz, open drain - 3.5 - G Forward Transfer *5 Y V = 5V, I = 4.5A 2.6 - - S fs DS D Admittance *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170612 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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