X-On Electronics has gained recognition as a prominent supplier of QH8K26TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QH8K26TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QH8K26TR ROHM

QH8K26TR electronic component of ROHM
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See Product Specifications
Part No.QH8K26TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 40V NCH+NCH SMALL SIGNAL
Datasheet: QH8K26TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.4092 ea
Line Total: USD 1227.6 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.513

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2049
10 : USD 1.038
100 : USD 0.8092
500 : USD 0.6684
1000 : USD 0.5277

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2049
10 : USD 1.038
100 : USD 0.8092
500 : USD 0.6684
1000 : USD 0.5277

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4092
6000 : USD 0.4048
9000 : USD 0.3927

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the QH8K26TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QH8K26TR and other electronic components in the MOSFETs category and beyond.

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QH8K26 Datasheet 40V Nch + Nch Small Signal MOSFET llOutline V 40V DSS R (Max.) 38m DS(on) TSMT8 I 7.0A D P 2.6W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Motor Drive Quantity (pcs) 3000 Taping code TR Marking K26 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 I Continuous drain current 7.0 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 12 V GSS *3 I Avalanche current, single pulse 12 A AS *3 E Avalanche energy, single pulse 1.0 mJ AS *1 P 2.6 D *4 P Power dissipation (total) 1.5 W D *5 P 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. QH8K26 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 83.3 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 113 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 12V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -4.6 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 7.0A - 27 38 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.5V, I = 5.0A - 35 50 GS D R Gate resistance f = 1MHz, open drain - 7.1 - G Forward Transfer *6 Y V = 5V, I = 5A 2 - - S fs DS D Admittance *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.01mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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