APT5017BVFR APT5017SVFR 500V 30A 0.170 FREDFET POWER MOS V TO-247 3 D PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Fast Recovery Body Diode 100% Avalanche Tested FREDFET Lower Leakage Faster Switching G 3 TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5017BVFR SVFR UNIT V Drain-Source Voltage Volts 500 DSS I Continuous Drain Current T = 25C 30 D C Amps 1 I Pulsed Drain Current 120 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 370 C P D Linear Derating Factor 2.96 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 30 Amps AR 1 E 30 Repetitive Avalanche Energy AR mJ 4 E 1300 AS Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 30 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) 0.17 Ohms DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 250 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 1000 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1.0mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5017BVFR SVFR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 4400 5280 iss V = 0V GS C Output Capacitance 600 840 pF V = 25V oss DS C f = 1 MHz Reverse Transfer Capacitance 230 350 rss 3 Q Total Gate Charge V = 10V 200 300 g GS V = 0.5 V Q nC Gate-Source Charge 30 45 gs DD DSS I = I Cont. 25C Q Gate-Drain Mille) Charge D D 80 120 gd t (on) Turn-on Delay Time 12 25 d V = 15V GS t V = 0.5 V Rise Time 14 30 r DD DSS ns I = I Cont. 25C t (off) Turn-off Delay Time 55 80 d D D V = 1.6 G t Fall Time 11 20 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT Continuous Source Current (Body Diode) I 30 S Amps 1 I Pulsed Source Current (Body Diode) 120 SM 2 V Diode Forward Voltage (V = 0V, I = -I Cont. ) 1.3 Volts SD GS S D dv dv 5 Peak Diode Recovery / 5 V/ns / dt dt Reverse Recovery Time T = 25C 250 j ns t rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 525 j Reverse Recovery Charge T = 25C 1.6 j Q C rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 6.0 j Peak Recovery Current T = 25C 13 j I Amps RRM di (I = -I Cont. , / = 100A/s) S D dt T = 125C 21 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.34 JC C/W Junction to Ambient 40 R JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 2.89mH, R = 25 , Peak I = 30A j G L 2 5 di Pulse Test: Pulse width < 380 S, Duty Cycle < 2% I -I Cont. , / = 100A/s, V V , T 150C, R = 2.0 , S D DD DSS j G dt V = 200V. R APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 Duty Factor D = / t 2 0.05 SINGLE PULSE 0.1 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5547 Rev C 11-2003 Z , THERMAL IMPEDANCE (C/W) JC P DM