X-On Electronics has gained recognition as a prominent supplier of APT5017BVRG MOSFET across the USA, India, Europe, Australia, and various other global locations. APT5017BVRG MOSFET are a product manufactured by Microchip. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

APT5017BVRG Microchip

APT5017BVRG electronic component of Microchip
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See Product Specifications
Part No.APT5017BVRG
Manufacturer: Microchip
Category: MOSFET
Description: MOSFET FG, MOSFET, 500V, TO-247, RoHS
Datasheet: APT5017BVRG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.972 ea
Line Total: USD 12.97

Availability - 310
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
302
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 12.972
500 : USD 11.96
1000 : USD 11.776
5000 : USD 11.5115

   
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RoHS - XON
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We are delighted to provide the APT5017BVRG from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT5017BVRG and other electronic components in the MOSFET category and beyond.

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Image Part-Description
Stock Image APT5020BVFRG
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Stock : 681
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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APT5017BVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leakage Popular TO-247 Package G S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5017BVR UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 30 D C Amps 1 I Pulsed Drain Current 120 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 370 Watts C P D Linear Derating Factor 2.96 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 30 Amps AR 1 E 30 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 30 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) Ohms 0.170 DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1.0mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5017BVR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance V = 0V 4400 5280 iss GS C Output Capacitance V = 25V oss 600 840 pF DS C f = 1 MHz Reverse Transfer Capacitance rss 230 350 Q 3 Total Gate Charge V = 10V g 200 300 GS Q V = 0.5 V Gate-Source Charge 30 45 nC gs DD DSS I = I 25C Q D D Cont. Gate-Drain Mille) Charge gd 80 120 t Turn-on Delay Time V = 15V 12 25 d(on) GS t V = 0.5 V Rise Time 14 30 r DD DSS ns I = I 25C t Turn-off Delay Time D D Cont. 55 80 d(off) R = 1.6 t G Fall Time 11 20 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 30 S Amps 1 I Pulsed Source Current (Body Diode) 120 SM 2 V Diode Forward Voltage (V = 0V, I = -I ) 1.3 Volts SD GS S D Cont. t Reverse Recovery Time (I = -I , dl /dt = 100A/s) 510 ns rr S D Cont. S Q Reverse Recovery Charge (I = -I , dl /dt = 100A/s) 10.2 C rr S D Cont. S THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.34 JC C/W R Junction to Ambient 40 JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 2.89mH, R = 25, Peak I = 30A j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.4 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.02 0.01 t 1 0.01 0.005 t 2 t 1 SINGLE PULSE Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5504 Rev E Z , THERMAL IMPEDANCE (C/W) JC P DM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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