X-On Electronics has gained recognition as a prominent supplier of SP000750498 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SP000750498 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SP000750498 Infineon

SP000750498 electronic component of Infineon
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See Product Specifications
Part No.SP000750498
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -20V -630mA SOT-323-3
Datasheet: SP000750498 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3531 ea
Line Total: USD 0.35 
Availability - 11412
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11412
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3531
10 : USD 0.2442
100 : USD 0.1551
1000 : USD 0.0704
3000 : USD 0.0616
9000 : USD 0.0484
24000 : USD 0.0462
45000 : USD 0.044
99000 : USD 0.0407

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SP000750498 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SP000750498 and other electronic components in the MOSFETs category and beyond.

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BSS 209PW OptiMOS -P Small-Signal-Transistor Product Summary Features V -20 V DS P-Channel R 550 m DS(on),max Enhancement mode I -0.63 A D Super Logic level ( 2.5 V rated) 150C operating temperature PG-SOT-323 Avalanche rated dv /dt rated Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSS 209PW SOT-323 H6327: 1000 pcs/reel X3s Yes Non Dry =25 C, unless otherwise specified Maximum ratings, at T j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C -0.63 A D C T =70 C -0.5 C Pulsed drain current I T =25 C -2.5 D,pulse C I = -0.63 A, D E 4.0 Avalanche energy, single pulse mJ AS R =25 GS I = -0.63 A, D V =-16 V, DS -6 Reverse diode dv /dt dv /dt kV/s di /dt =-200 A/s, T =150 C j,max Gate source voltage V 12 V GS Power dissipation P T =25 C 0.30 W tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-C101 (HBM) 0 (max 250V) 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.32 page 1 2011-07-13BSS 209PW Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 120 K/W thJS junction - soldering point minimal footprint R SMD version, device on PCB: - - 420 thJA 2 1) - - 350 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250A Drain-source breakdown voltage -20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =3.5 A -0.6 -0.9 -1.2 GS(th) DS GS D V =-20 V, V =0 V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25 C j V =-20 V, V =0 V, DS GS - -10 -100 T =150 C j I V =12 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =2.5 V, I =0.46 A - 581 900 DS(on) GS D V =4.5 V, I =0.63 A - 379 550 GS D V >2 I R , DS D DS(on)max g Transconductance 0.87 1.74 - S fs I =0.46 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t10 sec. Rev. 1.32 page 2 2011-07-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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