X-On Electronics has gained recognition as a prominent supplier of IPW60R017C7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPW60R017C7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPW60R017C7XKSA1 Infineon

IPW60R017C7XKSA1 electronic component of Infineon
IPW60R017C7XKSA1 Infineon
IPW60R017C7XKSA1 MOSFETs
IPW60R017C7XKSA1  Semiconductors

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See Product Specifications
Part No. IPW60R017C7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET HIGH POWER_NEW
Datasheet: IPW60R017C7XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 20.412 ea
Line Total: USD 20.41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 240
Multiples : 240
240 : USD 14.3462
480 : USD 13.1125

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 240
Multiples : 1
240 : USD 14.3462
480 : USD 13.1125

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 20.412
25 : USD 13.541
100 : USD 13.343
240 : USD 13.332
480 : USD 12.43
2640 : USD 12.419

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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We are delighted to provide the IPW60R017C7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPW60R017C7XKSA1 and other electronic components in the MOSFETs category and beyond.

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IPW60R017C7 MOSFET TO-247 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with R *A below 1Ohm*mm. DS(on) Features Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns Drain Increased efficiency due to best in class FOM R *E and R *Q Pin 2, Tab DS(on) oss DS(on) g Best in class R /package DS(on) Qualified for industrial grade applications according to JEDEC (J-STD20 Gate and JESD22) Pin 1 Source Pin 3 Benefits Increased economies of scale by use in PFC and PWM topologies in the application Higher dv/dt limit enables faster switching leading to higher efficiency Enabling higher system efficiency by lower switching losses Increased power density solutions due to smaller packages Suitable for applications such as server, telecom and solar Higher switching frequencies possible without loss in efficiency due to low Eoss and Qg Applications PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 17 m DS(on),max Qg.typ 240 nC I 495 A D,pulse I T<150C 129 A D,continuous j E 400V 30 J oss Body diode di/dt 200 A/s Type / Ordering Code Package Marking Related Links IPW60R017C7 PG-TO 247 60C7017 see Appendix A Final Data Sheet 1 Rev. 2.0, 2016-03-01600V CoolMOS C7 Power Transistor IPW60R017C7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2016-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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