DMNH6022SSDQ 60V +175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 22.6A 27m V = 10V GS 60V and Robust End Application 30m V = 6V 21.5A GS Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses g Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to meet the stringent requirements of PPAP Capable (Note 4) Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data Engine Management Systems Case: SO-8 Body Control Electronics DC-DC Converters Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-8 D 1 D 2 S1 D1 Pin1 G1 D1 G2 G1 S2 D2 G2 D2 S1 S2 Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMNH6022SSDQ-13 SO-8 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMNH6022SSDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 22.6 C A I D 16.0 T = +100C C Continuous Drain Current V = 10V (Note 7) GS T = +25C 7.1 A I A D 5.9 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 45 A DM Maximum Continuous Body Diode Forward Current (Note 7) 2 A I S Avalanche Current L = 0.1mL (Note 8) 22 A I AS Avalanche Energy L = 0.1mL (Note 8) 24 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.5 W T = +25C P A D Steady State 104 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 60 Total Power Dissipation (Note 7) 2.1 W T = +25C P A D Steady State 74 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 42 C/W Thermal Resistance, Junction to Case (Note 7) 7.25 R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(TH) DS GS D 21 27 V = 10V, I = 5A GS D Static Drain-Source On-Resistance m R DS(ON) 24 30 V = 6V, I = 5A GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 2127 pF iss V = 25V, V = 0V, DS GS Output Capacitance 86 pF C oss f = 1.0MHz Reverse Transfer Capacitance 54 pF C rss Gate Resistance 2.0 R V = 0V, V = 0V, f = 1MHz g DS GS 32 nC Total Gate Charge at (V = 10V) Q GS g Total Gate Charge at (V = 4.5V) Q 14 nC GS g V = 30V, I = 6A DS D Gate-Source Charge Q 7 nC gs Gate-Drain Charge Q 4 nC gd Turn-On Delay Time t 5.4 ns D(ON) Turn-On Rise Time t 4.4 ns R V = 10V, V = 30V, GS DS Turn-Off Delay Time 30.4 ns R = 6, I = 1A tD(OFF) G D Turn-Off Fall Time 8.4 ns t F Body Diode Reverse Recovery Time 18.1 ns t I = 1.7A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge 12.5 nC Q I = 1.7A, di/dt = 100A/s RR F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. IAS and EAS rating are based on low frequency and duty cycles to keep T = +25C. J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH6022SSDQ August 2016 Diodes Incorporated www.diodes.com Document number: DS38694 Rev. 4 - 2