DMN61D9U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max D Low On-Resistance V R max (BR)DSS DS(ON) T = +25C A Low Input Capacitance 380mA 2 V = 5V GS 60V Fast Switching Speed 2.5 V = 2.5V 340mA GS Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. Motor Control UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (Approximate) D SOT23 D G Gate Protection G S S Diode ESD protected up to 2kV Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN61D9U-7 SOT23 3000/Tape & Reel DMN61D9U-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN61D9U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 380 A I mA D State 300 T = +70C A Continuous Drain Current (Note 6) V = 5.0V GS T = +25C 430 A t<5s mA I D 340 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 0.4 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) I 1.2 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 370 mW P D Steady State 351 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<5s 292 Total Power Dissipation (Note 6) 540 mW P D Steady State 221 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<5s 197 Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.0 V V = 10V, I = 250A GS(TH) DS D V = 5.0V, I = 0.05A 1.2 2.0 GS D Static Drain-Source On-Resistance 1.6 2.5 R V = 2.5V, I = 0.05A DS(ON) GS D 2.5 3.5 V = 1.8V, I = 0.05A GS D Forward Transconductance 200 mS Y V =10V, I = 0.2A fs DS D Diode Forward Voltage V 0.75 1.4 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 28.5 pF iss VDS = 30V, VGS = 0V Output Capacitance C 3.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.5 pF rss Gate Resistance R 65 f = 1MHz , V = 0V, V = 0V g GS DS Total Gate Charge Q 0.4 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.1 nC Q gs I = 250mA D Gate-Drain Charge 0.1 nC Q gd Turn-On Delay Time 2.1 ns t D(ON) Turn-On Rise Time 1.8 ns t V = 30V, V = 10V, R DD GS Turn-Off Delay Time 14.4 ns t R = 25, I = 200mA D(OFF) G D Turn-Off Fall Time t 8.4 ns F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN61D9U November 2015 Diodes Incorporated www.diodes.com Document number: DS38022 Rev. 2 - 2 NEW PRODUCT NEW PRODUCT