X-On Electronics has gained recognition as a prominent supplier of CPH5506-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CPH5506-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CPH5506-TL-E ON Semiconductor

CPH5506-TL-E electronic component of ON Semiconductor
CPH5506-TL-E ON Semiconductor
CPH5506-TL-E Bipolar Transistors - BJT
CPH5506-TL-E  Semiconductors

Images are for reference only
See Product Specifications
Part No. CPH5506-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT HIGH-FREQUENCY AMPLIFIER
Datasheet: CPH5506-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1344 ea
Line Total: USD 403.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1344
9000 : USD 0.1296

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.5041
10 : USD 0.7114
100 : USD 0.3861
500 : USD 0.3038
1000 : USD 0.2347
3000 : USD 0.2126
6000 : USD 0.2015

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 3
Multiples : 1
3 : USD 0.5531
25 : USD 0.4979
42 : USD 0.3613
115 : USD 0.3416

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH5506-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH5506-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN6590B CPH5506 Bipolar Transistor CPH5506 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)30V, I =0A (--)0.1 mA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 mA EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)300mA (450)500 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (9)8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)750mA, I =(--)15mA (--250)150 (--375)225 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)750mA, I =(--)15mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10mA, I =0A (--30)40 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10mA, I =0A (--)5 V (BR)EBO E C Turn-On Time t 35 ns on Storage Time t See specified Test Circuit. (115)205 ns stg Fall Time t 30 ns f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit I B1 PW=20ms D.C. 1% I OUTPUT B2 INPUT R B R L V R 16 50 + + 100mF 470mF 20I = --20I =I =750mA B1 B2 C V = --5V V =12V For PNP, the polarity is reversed. BE CC Ordering Information Device Package Shipping memo CPH5506-TL-E CPH5 3,000pcs./reel Pb Free No.6590-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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