Ordering number : ENA1804B CPH3457 N-Channel Power MOSFET CPH3457 Electrical Characteristics at Ta=25C Value Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 mA DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 mA GSS GS DS Gate Threshold Voltage V V =10V, I =1mA 0.4 1.3 V (th) GS DS D g Forward Transconductance V =10V, I =1.5A 2.7 S FS DS D R (on)1 I =1.5A, V =4.5V 73 95 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =0.75A, V =2.5V 95 133 m DS D GS R (on)2 I =0.3A, V =1.8V 135 203 m DS D GS Input Capacitance Ciss V =10V, f=1MHz 265 pF DS Output Capacitance Coss V =10V, f=1MHz 35 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 28 pF DS Turn-ON Delay Time t See specified Test Circuit. 5.1 ns d(on) Rise Time t See specified Test Circuit. 10 ns r Turn-OFF Delay Time t See specified Test Circuit. 137 ns d(off) Fall Time t See specified Test Circuit. 36 ns f Total Gate Charge Qg V =15V, V =4.5V, I =3A 3.5 nC DS GS D Gate-to-Source Charge Qgs V =15V, V =4.5V, I =3A 0.57 nC DS GS D Gate-to-Drain Miller Charge Qgd V =15V, V =4.5V, I =3A 0.93 nC DS GS D Forward Diode Voltage V I =3A, V =0V 0.87 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =15V DD V IN 4.5V I =1.5A D 0V R =10 L V V IN D OUT PW=10ms D.C.1% G P.G 50 CPH3457 S Ordering Information Device Package Shipping memo CPH3457-TL-H CPH3 3,000pcs./reel Pb-Free and Halogen Free CPH3457-TL-W No. A1804-2/5