PBSS2540M,315 Nexperia

PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 22 February 2018 Product data sheet 1. General description Low V NPN transistor in a SOT883 leadless ultra small plastic package. CEsat PNP complement: PBSS3540M. 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High efficiency leading to reduced heat generation Reduced printed-circuit board requirements. AEC-Q101 qualified 3. Applications Power management: DC-DC converter Supply line switching Battery charger LCD backlighting. Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs). Inductive load drivers (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 40 V CEO voltage I collector current 1 2 - - 500 mA C I peak collector current single pulse t 1 ms - - 1 A CM p h DC current gain V = 2 V I = 10 mA T = 25 C 200 - - FE CE C amb R collector-emitter I = 500 mA I = 50 mA t 300 s - 380 500 m CEsat C B p saturation resistance pulsed 0.02 T = 25 C amb 1 Device mounted on an FR4 Printed-Circuit Board, (PCB), single-sided copper, tinplated, standard footprint, with 60 m copper strip line. 2 Refer to SOT883 standard mounting conditions.Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 3 2 E emitter 2 B Transparent 3 C collector top view E DFN1006-3 (SOT883) sym123 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS2540M DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PBSS2540M DC PBSS2540M All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 2 / 10