PBSS2540E,115 NXP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS2540E 40 V, 500 mA NPN low V (BISS) transistor CEsat Rev. 02 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD CEsat plastic package. PNP complement: PBS3540E. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 40 V CEO I collector current (DC) - - 500 mA C I peak collector current - - 1 A CM 1 R collector-emitter I =500 mA - 380 500 m CEsat C saturation resistance I =50mA B 1 Pulse test: t 300 s 0.02 p