PMFPB8040XP,115 Nexperia

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low V Maximum Efficiency General Application (MEGA) F Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits 1.8 V R rated for low-voltage gate drive DSon Small and leadless ultra thin SMD plastic package: 2 2 0.65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low V MEGA Schottky diode F 3. Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit MOSFET transistor V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.7 A D GS amb Schottky diode I forward current T 105 C - - 2 A F sp V reverse voltage T = 25 C - - 30 V R amb MOSFET transistor static characteristics R drain-source on-state V = -4.5 V I = -2.7 A T = 25 C - 80 102 m DSon GS D j resistance Scan or click this QR code to view the latest information for this product