PMGD175XN NXP

PMGD175XN 30 V, dual N-channel Trench MOSFET Rev. 1 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching sircuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor drain-source voltage T=25C --30 V V DS j gate-source voltage -12 - 12 V V GS 1 drain current V =4.5 V T =25C t 5 s --1 A I D GS amb Static characteristics (per transistor) drain-source on-state V =4.5 V I =1A T = 25 C - 170 225 m R DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .PMGD175XN NXP Semiconductors 30 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 D1 D2 4 2 G1 gate TR1 3D2 drain TR2 4S2 source TR2 132 5 G2 gate TR2 SOT363 (TSSOP6) 6D1 drain TR1 G1 S1 S2 G2 017aaa254 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMGD175XN TSSOP6 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code PMGD175XN U7% 1 % = placeholder for manufacturing site code PMGD175XN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 1 June 2012 2 of 15