X-On Electronics has gained recognition as a prominent supplier of PMGD175XNEX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMGD175XNEX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMGD175XNEX Nexperia

PMGD175XNEX electronic component of Nexperia
PMGD175XNEX Nexperia
PMGD175XNEX MOSFETs
PMGD175XNEX  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMGD175XNEX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET PMGD175XNE/SC-88/REEL 7" Q1/T1
Datasheet: PMGD175XNEX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4438 ea
Line Total: USD 0.44 
Availability - 109326
Ship by Wed. 23 Apr to Fri. 25 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
773
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 797
Multiples : 1
797 : USD 0.1149

109326
Ship by Wed. 23 Apr to Fri. 25 Apr
MOQ : 1
Multiples : 1
1 : USD 0.4438
10 : USD 0.3275
100 : USD 0.1692
500 : USD 0.1496
1000 : USD 0.1287
3000 : USD 0.1177
6000 : USD 0.11
9000 : USD 0.099
24000 : USD 0.0979

5820
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1418
6000 : USD 0.1302
9000 : USD 0.118
24000 : USD 0.1099

773
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 797
Multiples : 1
797 : USD 0.1149

704
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 343
Multiples : 1
343 : USD 0.4992

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMGD175XNEX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMGD175XNEX and other electronic components in the MOSFETs category and beyond.

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PMGD175XNE 30 V, Dual N-channel Trench MOSFET 15 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 0.95 A D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 0.9 A T = 25 C - 211 252 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMGD175XNE 30 V, Dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D1 D2 1 S1 source TR1 2 G1 gate TR1 G1 3 D2 drain TR2 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMGD175XNE TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 PMGD175XNE LU% 1 % = placeholder for manufacturing site code PMGD175XNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 April 2016 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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