X-On Electronics has gained recognition as a prominent supplier of PMGD175XNEX MOSFET across the USA, India, Europe, Australia, and various other global locations. PMGD175XNEX MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.
We are delighted to provide the PMGD175XNEX from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMGD175XNEX and other electronic components in the MOSFET category and beyond.
PMGD175XNE 30 V, Dual N-channel Trench MOSFET 15 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 0.95 A D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 0.9 A T = 25 C - 211 252 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMGD175XNE 30 V, Dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D1 D2 1 S1 source TR1 2 G1 gate TR1 G1 3 D2 drain TR2 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMGD175XNE TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 PMGD175XNE LU% 1 % = placeholder for manufacturing site code PMGD175XNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 April 2016 2 / 16
