X-On Electronics has gained recognition as a prominent supplier of PMDXB950UPE MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDXB950UPE MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDXB950UPE Nexperia

PMDXB950UPE electronic component of Nexperia
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Part No.PMDXB950UPE
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, DUAL P-CH, -20V, -0.5A, DFN1010B
Datasheet: PMDXB950UPE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.2107 ea
Line Total: USD 21.07 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 100
Multiples : 1
100 : USD 0.2107
500 : USD 0.1651
1000 : USD 0.1273
5000 : USD 0.1207

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMDXB950UPE from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDXB950UPE and other electronic components in the MOSFETs category and beyond.

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PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 1.02 DSon 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product DFN1010B- 6NXP Semiconductors PMDXB950UPE 20 V, dual P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa260 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDXB950UPE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMDXB950UPE 10 10 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMDXB950UPE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 30 June 2015 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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