PMEG045T100EPDAZ Nexperia

PMEG045T100EPD 45 V, 10 A low VF Trench MEGA Schottky barrier rectifier 23 January 2019 Objective data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: I 10 A F(AV) Reverse voltage: V 45 V R Extremely low forward voltage High power capability due to clip-bonding technology and heat sink Small and thin SMD power plastic package, typical height 0.95 mm AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Freewheeling application Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage T = 25 C - - 45 V R j V forward voltage I = 10 A T = 25 C pulsed 1 - 480 545 mV F F j I reverse current V = 10 V T = 25 C pulsed 1 - 11 41 A R R j V = 45 V T = 25 C pulsed 1 - 22 80 A R j I average forward = 0.5 f = 20 kHz T 142 C - - 10 A F(AV) sp current 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG045T100EPD 45 V, 10 A low VF Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A 1 K A 2 A anode 3 aaa-009063 3 K cathode 2 CFP15B (SOT1289B) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG045T100EPD CFP15B plastic, thermal enhanced ultra thin SMD package 3 leads 2.13 SOT1289B mm pitch 5.8 x 4.3 x 0.95 mm body 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 45 V R j I forward current = 1 T 137 C - 14 A F sp I average forward current = 0.5 f = 20 kHz T 142 C - 10 A F(AV) sp I non-repetitive peak t = 8 ms square wave T = 25 C - 130 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 1.66 W tot amb 2 - 2.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG045T100EPD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Objective data sheet 23 January 2019 2 / 10