X-On Electronics has gained recognition as a prominent supplier of PMDXB1200UPE MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDXB1200UPE MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDXB1200UPE Nexperia

PMDXB1200UPE electronic component of Nexperia
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Part No.PMDXB1200UPE
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, DUAL P-CH, -30V, -0.41A, DFN-6
Datasheet: PMDXB1200UPE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.1756 ea
Line Total: USD 17.56 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 100
Multiples : 1
100 : USD 0.1756
500 : USD 0.1515
1000 : USD 0.1341
5000 : USD 0.1185

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMDXB1200UPE from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDXB1200UPE and other electronic components in the MOSFETs category and beyond.

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PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -410 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = -4.5 V I = -410 mA T = 25 C - 1.2 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product DFN1010B- 6NXP Semiconductors PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa260 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDXB1200UPE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMDXB1200UPE 11 10 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMDXB1200UPE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 25 March 2015 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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