PMDT670UPE Nexperia

PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---550mA D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I = -400 mA T = 25 C - 0.67 0.85 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT666PMDT670UPE NXP Semiconductors 20 V, 550 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 S1 S2 017aaa260 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDT670UPE - plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PMDT670UPE AG 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - -20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =-4.5 V T =25C - -550 mA D GS amb 1 V =-4.5 V T =100 C - -350 mA GS amb I peak drain current T = 25 C single pulse t 10 s - -2.2 A DM amb p 2 P total power dissipation T =25C - 330 mW tot amb 1 - 390 mW T = 25 C - 1090 mW sp Per device 2 P total power dissipation T =25C - 500 mW tot amb T junction temperature -55 150 C j T ambient temperature -55 150 C amb PMDT670UPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 13 September 2011 2 of 16