IRFBC40AS, SiHFBC40AS www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Q results in simple drive g V (V) 600 DS requirement R ( )V = 10 V 1.2 DS(on) GS Available Improved gate, avalanche and dynamic dV/dt Q max. (nC) 42 g ruggedness Q (nC) 10 gs Available Fully characterized capacitance and avalanche Q (nC) 20 gd voltage and current Configuration Single Effective C specified oss D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 D PAK (TO-263) Note * This datasheet provides information about parts that are G RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. APPLICATIONS S D G Switch mode power supply (SMPS) S N-Channel MOSFET Uninterruptible power supply High speed power switching TYPICAL SMPS TOPOLOGIES Single transistor forward ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHFBC40AS-GE3 SiHFBC40ASTRL-GE3 SiHFBC40ASTRR-GE3 a a IRFBC40ASPbF IRFBC40ASTRLPbF IRFBC40ASTRRPbF Lead (Pb)-free a a SiHFBC40AS-E3 SiHFBC40ASTL-E3 SiHFBC40ASTR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 6.2 C e Continuous Drain Current V at 10 V I GS D T = 100 C 3.9 A C a, e Pulsed Drain Current I 25 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 570 mJ AS a Repetitive Avalanche Current I 6.2 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c, e Peak Diode Recovery dV/dt dV/dt 6.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 29.6 mH, R = 25 , I = 6.2 A (see fig. 12). J g AS c. I 6.2 A, dI/dt 88 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRFBC40A, SiHFBC40A data and test conditions. S16-0763-Rev. D, 02-May-16 Document Number: 91113 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFBC40AS, SiHFBC40AS www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D d V/C V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.66 - DS J DS D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.7 A -- 1.2 DS(on) GS D Forward Transconductance g V = 50 V, I = 3.7 A 3.4 - - S fs DS D Dynamic Input Capacitance C - 1036 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 136- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -7.0- rss pF V = 1.0 V, f = 1.0 MHz - 1487 - DS Output Capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 36 - GS DS c Output Capacitance Effective C eff. V = 0 V to 480 V -48 - oss DS Total Gate Charge Q -- 42 g I = 6.2 A, V = 480 V, D DS Gate-Source Charge Q --V = 10 V 10 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --20 gd Turn-On Delay Time t -13 - d(on) V = 300 V, I = 6.2 A, DD D Rise Time t -23 - r R = 9.1 , R = 47 ns g D Turn-Off Delay Time t -31- b d(off) see fig. 10 Fall Time t -18- f Gate Input Resistance R f = 1 MHz, open drain 0.6 - 3.9 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 6.2 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 25 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 6.2 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 431 647 ns rr b T = 25 C, I = 6.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.8 2.8 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . OSS oss DS DS d. Uses IRHFBC40A, SiHFBC40A data and test conditions. S16-0763-Rev. D, 02-May-16 Document Number: 91113 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000