FastIRFET IRFH4257DPbF HEXFET Power MOSFET Q1 Q2 V 25 25 V DSS R max DS(on) 4.70 1.80 m ( V = 4.5V) GS Qg 9.7 23 nC (typical) I D 25 25 A ( T = 25C) C Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low charge control MOSFET (9.7nC typical) Lower switching losses results in Low R synchronous MOSFET (<1.8m) Lower conduction losses DSON Intrinsic Schottky Diode with Low Forward Voltage on Q2 Lower Switching Losses RoHS Compliant, Halogen-Free Environmentally friendlier MSL1, Industrial Qualification Increased reliability Standard Pack Orderable Part Number Base part number Package Type Form Quantity IRFH4257DPbF Dual PQFN 5mm x 4mm Tape and Reel 4000 IRFH4257DTRPbF Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 4.5V 68 111 D C GS I T = 70C Continuous Drain Current, V 4.5V 54 88 D C GS A I T = 25C Continuous Drain Current, V 4.5V D C GS 25 25 (Source Bonding Technology Limited) I Pulsed Drain Current 120 375 DM P T = 25C Power Dissipation 25 28 D C W P T = 70C Power Dissipation 16 18 D C Linear Derating Factor 0.20 0.22 W/C T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units R (Bottom) Junction-to-Case 5.0 4.5 JC Junction-to-Case 33 26 R (Top) JC C/W Junction-to-Ambient 45 40 R JA Junction-to-Ambient 30 27 R (<10s) JA Notes through are on page 12 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback September 15, 2014 IRFH4257DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage Q1 25 V = 0V, I = 250A DSS GS D V Q2 25 V = 0V, I = 1.0mA GS D BV /T Breakdown Voltage Temp. Coefficient Q1 22 Reference to 25C, I = 1.0mA D DSS J mV/C Q2 22 Reference to 25C, I = 10mA D Q1 2.7 3.4 V = 10V, I = 25A GS D R Static Drain-to-Source On-Resistance Q2 1.1 1.4 V = 10V, I = 25A DS(on) GS D m Q1 3.7 4.7 V = 4.5V, I = 25A GS D Q2 1.4 1.8 V = 4.5V, I = 25A GS D V Gate Threshold Voltage Q1 1.1 1.6 2.1 Q1: V = V , I = 35A GS(th) DS GS D V Q2 1.1 1.6 2.1 Q2: V = V , I = 100A DS GS D V /T Gate Threshold Voltage Coefficient Q1 -5.4 Q1: V = V , I = 35A DS GS D GS(th) J mV/C Q2 -5.3 Q2: V = V , I = 1mA DS GS D Q1 1.0 V = 20V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS Q2 250 V = 20V, V = 0V DS GS Q1 100 V = 20V GS Gate-to-Source Forward Leakage Q2 100 V = 20V GS I nA GSS Q1 -100 V = -20V GS Gate-to-Source Reverse Leakage Q2 -100 V = -20V GS gfs Forward Transconductance Q1 100 V = 10V, I = 25A DS D S Q2 138 V = 10V, I = 25A DS D Q Total Gate Charge Q1 9.7 15 g Q2 23 35 Q Pre-Vth Gate-to-Source Charge Q1 2.4 Q1 gs1 Q2 5.1 V = 13V DS Q Post-Vth Gate-to-Source Charge Q1 1.2 V = 4.5V, I = 25A gs2 GS D Q2 2.6 nC Q2 Q Gate-to-Drain Charge Q1 3.4 gd V = 13V Q2 7.6 DS V = 4.5V, I = 25A Q Gate Charge Overdrive Q1 2.7 godr GS D Q2 7.7 Q Switch Charge (Q + Q) Q1 4.6 sw gs2 gd Q2 10.2 Q Output Charge Q1 10 V = 16V, V = 0V oss DS GS nC Q2 25 R Gate Resistance Q1 1.4 G Q2 0.7 t Turn-On Delay Time Q1 8.2 Q1 d(on) Q2 12 V = 13V V = 4.5V DS GS t Rise Time Q1 47 r I = 25A, Rg = 1.8 D Q2 51 ns t Turn-Off Delay Time Q1 12 Q2 d(off) Q2 20 V = 13V V = 4.5V DS GS t Fall Time Q1 20 I = 25A, Rg = 1.8 f D Q2 25 C Input Capacitance Q1 1321 iss Q2 3161 V = 0V GS C Output Capacitance Q1 365 V = 13V oss DS pF Q2 965 = 1.0MHz C Reverse Transfer Capacitance Q1 101 rss Q2 237 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback September 15, 2014