PMDPB58UPE,115 Nexperia

PMDPB58UPE 20 V dual P-channel Trench MOSFET 3 February 2016 Product data sheet 1. General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 2 kV ElectroStatic Discharge (ESD) protection 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -4.5 A D GS amb Static characteristics (per transistor) R drain-source on-state V = -4.5 V I = -2 A T = 25 C - 58 67 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMDPB58UPE 20 V dual P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 7 8 G1 3 D2 drain TR2 G2 4 S2 source TR2 1 2 3 5 G2 gate TR2 Transparent top view S1 S2 6 D1 drain TR1 017aaa260 DFN2020-6 (SOT1118) 7 D1 drain TR1 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB58UPE DFN2020-6 DFN2020-6: plastic thermal enhanced ultra thin small SOT1118 outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PMDPB58UPE 2A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -8 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - -4.5 A D GS amb V = -4.5 V T = 25 C 1 - -3.6 A GS amb V = -4.5 V T = 100 C 1 - -2.3 A GS amb PMDPB58UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 3 February 2016 2 / 14