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X-On Electronics has gained recognition as a prominent supplier of PMDPB65UP,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDPB65UP,115 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDPB65UP,115 NXP

PMDPB65UP,115 electronic component of NXP
PMDPB65UP,115 NXP
PMDPB65UP,115 MOSFETs
PMDPB65UP,115  Semiconductors

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See Product Specifications
Part No. PMDPB65UP,115
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET P-CH 20V 3.5A 6-Pin DFN EP T/R
Datasheet: PMDPB65UP,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 0.847 ea
Line Total: USD 33.88 
Availability - 0
MOQ: 40  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMDPB65UP,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDPB65UP,115 and other electronic components in the MOSFETs category and beyond.

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PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 2 0.65 mm 1.8 V R rated for low voltage gate DSon drive Exposed drain pad for excellent thermal conduction 1 kV ElectroStatic Discharge (ESD) protection 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC-to-DC converters Hard disk and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source T =25C ---20 V DS amb voltage V gate-source -8 - 8 V GS voltage [1] I drain current V =-4.5V; T =25C ---3.5A D GS amb Static characteristics (per transistor) R drain-source V =-4.5V; I =-1A; - 5870m DSon GS D on-state t 300 s; 0.01 ; p resistance T =25C j [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .PMDPB65UP NXP Semiconductors 20 V, 3.5 A dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source 1 6 54 2 G1 gate 1 1 6, 7 3D2 drain 2 78 4S2 source 2 5 G2 gate 2 2 5 123 6D1 drain 1 Transparent top view 7D1 drain 1 SOT1118 (HUSON6) 3, 8 4 8D2 drain 2 017aaa062 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB65UP HUSON6 plastic thermal enhanced ultra thin small outline package; SOT1118 no leads; 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB65UP 1C 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - -20 V DS amb V gate-source voltage -8 8 V GS [1] I drain current V =-4.5 V; T =25C --3.5 A D GS amb [1] V =-4.5 V; T =100 C --2.7 A GS amb I peak drain current T = 25 C; single pulse; t 10 s - -20 A DM amb p [2] P total power dissipation T =25C - 520 mW tot amb [1] -1.25W T =25C - 8.3 W sp PMDPB65UP All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 8 March 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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