X-On Electronics has gained recognition as a prominent supplier of PMDPB95XNE2X MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDPB95XNE2X MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDPB95XNE2X Nexperia

PMDPB95XNE2X electronic component of Nexperia
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Part No.PMDPB95XNE2X
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET PMDPB95XNE2/HUSON6/REEL 7" Q1/
Datasheet: PMDPB95XNE2X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4279 ea
Line Total: USD 0.43 
Availability - 13880
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13880
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4279
10 : USD 0.2871
100 : USD 0.1595
1000 : USD 0.1441
3000 : USD 0.1276
9000 : USD 0.1177
24000 : USD 0.1122

   
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We are delighted to provide the PMDPB95XNE2X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDPB95XNE2X and other electronic components in the MOSFETs category and beyond.

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PMDPB95XNE2 30 V, dual N-channel Trench MOSFET 14 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology Leadless medium power SMD plastic package: 2 2 0.65 mm Exposed drain pad for excellent thermal conduction EletroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 3 A D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 2.8 A T = 25 C - 77 99 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMDPB95XNE2 30 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 7 8 G1 3 D2 drain TR2 G2 4 S2 source TR2 1 2 3 5 G2 gate TR2 Transparent top view S1 S2 6 D1 drain TR1 017aaa256 DFN2020-6 (SOT1118) 7 D1 drain TR1 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB95XNE2 DFN2020-6 DFN2020-6: plastic thermal enhanced ultra thin small SOT1118 outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PMDPB95XNE2 3B PMDPB95XNE2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 June 2016 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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