AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance V 40V DSS 175C Operating Temperature R (SMD) typ. 0.97m DS(on) Fast Switching max. 1.2m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant I 409A D (Silicon Limited) Automotive Qualified * I 195A S D (Package Limited) Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon D D area. Additional features of this design are a 175C junction D operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make S this design an extremely efficient and reliable device for use S S D D G in Automotive applications and wide variety of other G G applications. 2 TO-220AB D Pak TO-262 Applications AUIRFB8409 AUIRFS8409 AUIRFSL8409 Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid GD S Heavy Loads Gate Drain Source DC-DC Applications Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRFB8409 TO-220 Tube 50 AUIRFB8409 AUIRFS8409 D2-Pak Tube 50 AUIRFS8409 AUIRFS8409 D2-Pak Tape and Reel Left 800 AUIRFS8409TRL AUIRFSL8409 TO-262 Tube 50 AUIRFSL8409 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Symbol Parameter Max. Units 409 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 289 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS 1524 I Pulsed Drain Current DM 375 P T = 25C Maximum Power Dissipation W D C 2.5 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy (Thermally Limited) E 760 AS mJ 1360 E Single Pulse Avalanche Energy Tested Value AS (tested) Avalanche Current I See Fig. 14, 15, 24a, 24b A AR Repetitive Avalanche Energy E mJ AR -55 to + 175 T Operating Junction and J C T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRFB/S/SL8409 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 C/W JC Case-to-Sink, Flat Greased Surface 0.50 R CS R Junction-to-Ambient (PCB Mount) 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1.0mA (BR)DSS J D R SMD 0.97 1.2 V = 10V, I = 100A DS(on) GS D Static Drain-to-Source On-Resistance m R TO-220 1.0 1.3 V = 10V, I = 100A DS(on) GS D V Gate Threshold Voltage 2.2 3.9 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 V = 40V, V = 0V DSS DS GS A 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 150 S V = 10V, I = 100A DS D Q Total Gate Charge 300 450 I = 100A g D Q Gate-to-Source Charge 77 V =20V gs DS nC Q Gate-to-Drain Mille) Charge 98 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 202 I = 100A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 32 = 20V V d(on) DD t Rise Time 105 I = 30A r D ns t Turn-Off Delay Time 160 R = 2.7 d(off) G t Fall Time 100 V = 10V f GS C Input Capacitance 14240 V = 0V iss GS C Output Capacitance 2130 V = 25V oss DS C Reverse Transfer Capacitance 1460 pF = 1.0 MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 2605 V = 0V, V = 0V to 32V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 2920 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 409 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1576 S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.86 1.2 V T = 25C, I = 100A, V = 0V SD J S GS dv/dt Peak Diode Recovery 2.7 V/ns T = 175C, I = 100A, V = 40V J S DS t Reverse Recovery Time 52 T = 25C V = 34V, rr J R ns 52 T = 125C I = 100A J F Q Reverse Recovery Charge 97 T = 25C di/dt = 100A/s rr J nC 97 T = 125C J I Reverse Recovery Current 2.3 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable Pulse width 400s duty cycle 2%. junction temperature. Bond wire current limit is 195A. Note that C eff. (TR) is a fixed capacitance that gives the same charging time oss current limitations arising from heating of the device leads may as C while V is rising from 0 to 80% V . oss DS DSS occur with some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.15mH, R = 50 , When mounted on 1 square PCB (FR-4 or G-10 Material). Jmax J G For recommended footprint and soldering techniques I = 100A, V =10V. Part not recommended for use above AS GS refer to application note AN-994. this value. I 100A, di/dt 990A/s, V V , T 175C. SD DD (BR)DSS J JC