DMN3067LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Product Summary
Low On-Resistance
I
D
V R
(BR)DSS DS(ON)
Low Gate Threshold Voltage
T = +25C
A
Low Input Capacitance
67m @ V = 4.5V 2.6A
GS
Fast Switching Speed
30V 70m @ V = 4.0V 2.5A
GS
Small Surface Mount Package
2.2A
98m @ V = 2.5V
GS
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the
on-state resistance (R ) and yet maintain superior switching
DS(ON) Mechanical Data
performance, making it ideal for high efficiency power management
Case: SOT323
applications.
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
Switching
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Power Management Functions
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
SOT323
D
G S
ESD PROTECTED
Top View
Top View
Equivalent Circuit
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMN3067LW-7 SOT323 3000/Tape & Reel
DMN3067LW-13 SOT323 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3067LW
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 12 V
GSS
Steady T = +25C 2.6
A
A
Continuous Drain Current (Note 6) V = 4.5V I
GS D
State 2.1
T = +70C
A
Pulsed Drain Current (10s pulse, duty cycle = 1%) 10 A
I
DM
Thermal Characteristics
Characteristic Symbol Value Units
(Note 5) 0.5
Total Power Dissipation W
P
D
(Note 6) 1.1
(Note 5) 241
Thermal Resistance, Junction to Ambient C/W
R
JA
(Note 6) 130
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic SymbolMin Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V
DSS DS GS
Gate-Body Leakage I 10 A V = 12V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.5 1.5 V V = V , I = 250 A
GS(th) DS GS D
48 67 V = 4.5V, I = 2.5A
GS D
Static Drain-Source On-Resistance 50 70 m
R V = 4.0V, I = 2.5A
DS (ON) GS D
70 98
V = 2.5V, I = 2.5A
GS D
Diode Forward Voltage 1.2 V
V V = 0V, I = 0.6A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 447
C
iss
54
Output Capacitance C pF V = 10V, V = 0V, f = 1.0MHz
oss DS GS
41
Reverse Transfer Capacitance C
rss
23
Gate Resistance R V = 0V, V = 0V, f = 1.0MHz
G DS GS
4.6
Total Gate Charge Q
g
V = 4.5V, V = 15V,
GS DS
1.0
Gate-Source Charge Q nC
gs
I = 2.5A
D
1.0
Gate-Drain Charge Q
gd
Turn-On Delay Time 3.8
t
D(on)
Turn-On Rise Time 5.2
t
r V = 15V, I = 1.25A, V = 4.5V
DD D GEN ,
nS
R = 10
Turn-Off Delay Time 15 GEN
t
D(off)
Turn-Off Fall Time 6.1
t
f
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 6 March 2014
DMN3067LW
Diodes Incorporated
www.diodes.com
Document number: DS36640 Rev. 4 - 2
NEW PRODUCT
ADVANCED INFORMATION