IRF7665S2TRPbF IRF7665S2TR1PbF Features Key Parameters Key parameters optimized for Class-D audio amplifier V 100 V DS applications R typ. V = 10V 51 m Low R for improved efficiency DS(on) GS DS(on) Low Q for better THD and improved efficiency g Q typ. 8.3 nC g Low Q for better THD and lower EMI rr R typ. 3.5 Low package stray inductance for reduced ringing and lower G(int) EMI Can deliver up to 100W per channel into 8 with no heatsink Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant containing no lead or bromide Lead-Free (Qualified up to 260C Reflow) Industrial Qualified DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SB SC M2 M4 L4 L6 L8 Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. TM TM The IRF7665S2TR/TR1PbF device utilizes DirectFET packaging technology. DirectFET packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im- TM proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and TM processes. The DirectFET package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 DS V V GS Gate-to-Source Voltage 20 Continuous Drain Current, V 10V I T = 25C C GS 14.4 D I T = 100C Continuous Drain Current, V 10V GS 10.2 D C A Continuous Drain Current, V 10V I T = 25C D A GS 4.1 I 58 Pulsed Drain Current DM Maximum Power Dissipation P T = 25C 30 D C W P T = 100C Power Dissipation C 15 D P T = 25C Power Dissipation A 2.4 D Linear Derating Factor 0.2 W/C T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient JA 63 R Junction-to-Ambient JA 12.5 R Junction-to-Ambient C/W JA 20 R Junction-to-Can J-Can 5.0 R Junction-to-PCB Mounted J-PCB 1.4 Notes through are on page 2 www.irf.com 1 07/02/09 IRF7665S2TR/TR1PbF Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V V = 0V, I = 250A (BR)DSS Drain-to-Source Breakdown Voltage 100 V GS D V /T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 0.10 V/C D (BR)DSS J R V = 10V, I = 8.9A Static Drain-to-Source On-Resistance 51 62 m GS D DS(on) V V = V , I = 25A Gate Threshold Voltage 3.0 4.0 5.0 V DS GS D GS(th) V = 100V, V = 0V I Drain-to-Source Leakage Current 20 A DS GS DSS V = 80V, V = 0V, T = 125C 250 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS R G(int) Internal Gate Resistance 3.5 5.0 Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 25V, I = 8.9A gfs Forward Transconductance 8.8 S DS D Q Total Gate Charge 8.3 13 V = 50V g DS Q Pre-Vth Gate-to-Source Charge 1.9 V = 10V gs1 GS Q I = 8.9A gs2 Post-Vth Gate-to-Source Charge 0.77 D Q Gate-to-Drain Charge 3.2 nC See Fig. 6 and 17 gd Q Gate Charge Overdrive 2.4 godr Q Switch Charge (Q + Q ) 4.0 sw gs2 gd V = 50V t Turn-On Delay Time 3.8 DD d(on) I = 8.9A t Rise Time 6.4 r D t Turn-Off Delay Time 7.1 ns R = 6.8 d(off) G V = 10V t Fall Time 3.6 f GS C V = 0V iss Input Capacitance 515 GS C V = 25V Output Capacitance 112 DS oss C = 1.0MHz Reverse Transfer Capacitance 30 pF rss C V = 0V, V = 1.0V, = 1.0MHz Output Capacitance 533 GS DS oss V = 0V, V = 80V, = 1.0MHz C Output Capacitance 67 GS DS oss V = 0V, V = 0V to 80V C eff. Effective Output Capacitance 115 oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 37 mJ AS I Avalanche Current 8.9 A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units MOSFET symbol D I Continuous Source Current S 14.4 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM 58 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 8.9A, V = 0V SD J S GS Reverse Recovery Time 33 ns T = 25C, I = 8.9A, V = 25V t DD rr J F Reverse Recovery Charge 38 nC di/dt = 100A/s Q rr Used double sided cooling , mounting pad. Repetitive rating pulse width limited by Mounted on minimum footprint full size board with max. junction temperature. metalized back and with small clip heatsink. Starting T = 25C, L = 0.944mH, R = 25, I = 8.9A. J G AS T measured with thermal couple mounted to top C Surface mounted on 1 in. square Cu board. (Drain) of part. Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J C eff. is a fixed capacitance that gives the same oss Based on testing done using a typical device & evaluation board charging time as C while V is rising from 0 to 80% V . oss DS DSS at Vbus=45V, f =400KHz, and T =25C. The delta case SW A temperature T is 55C. C 2 www.irf.com