X-On Electronics has gained recognition as a prominent supplier of PMDPB70XPE,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDPB70XPE,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDPB70XPE,115 Nexperia

PMDPB70XPE,115 electronic component of Nexperia
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Part No.PMDPB70XPE,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET PMDPB70XPE/HUSON6/REEL7
Datasheet: PMDPB70XPE,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4554 ea
Line Total: USD 0.46 
Availability - 12672
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12672
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.3069
100 : USD 0.1716
1000 : USD 0.154
3000 : USD 0.1287
9000 : USD 0.1221

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMDPB70XPE,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDPB70XPE,115 and other electronic components in the MOSFETs category and beyond.

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PMDPB70XPE 20 V dual P-channel Trench MOSFET Rev. 1 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching 2 kV ElectroStatic Discharge (ESD) protection Trench MOSFET technology 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.2 A D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I =-2 A T = 25 C - 66 79 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .PMDPB70XPE Nexperia 20 V dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 G1 G2 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 Transparent top view S1 S2 7D1 drain TR1 017aaa260 DFN2020-6 (SOT1118) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB70XPE DFN2020-6 plastic thermal enhanced ultra thin small outline package SOT1118 no leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB70XPE 2B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - -20 V DS j V gate-source voltage -12 12 V GS 1 I drain current V =-4.5 V T =25C t 5 s --4.2 A D GS amb 1 V =-4.5 V T =25C --3 A GS amb 1 V =-4.5 V T =100 C --2.1 A GS amb I peak drain current T = 25 C single pulse t 10 s - -12 A DM amb p 2 P total power dissipation T =25C - 515 mW tot amb 1 - 1210 mW T = 25 C - 8330 mW sp Source-drain diode 1 I source current T =25C --1.3 A S amb PMDPB70XPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 20 June 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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