PMN28UN,135 NXP

PMN28UN TrenchMOS ultra low level FET Rev. 01 27 September 2002 Product data M3D302 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: PMN28UN in SOT457 (TSOP6). 2. Features TrenchMOS technology Very fast switching Low threshold voltage Surface mount package. 3. Applications Battery powered motor control Load switch in notebook computers High speed switch in set top box power supplies Driver FET in DC to DC converters. 4. Pinning information Table 1: Pinning - SOT457 (TSOP6), simplied outline and symbol Pin Description Simplied outline Symbol 1,2,5,6 drain (d) d 6 5 4 3 gate (g) 4 source (s) g s MBB076 132 Top view MBK092 SOT457 (TSOP6)PMN28UN Philips Semiconductors TrenchMOS ultra low level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) 25 C T 150 C - 12 V DS j I drain current (DC) T =25 C; V = 4.5 V - 5.7 A D sp GS P total power dissipation T =25 C - 1.75 W tot sp T junction temperature - 150 C j R drain-source on-state resistance V = 4.5 V; I = 2 A; T =25 C 2834m DSon GS D j V = 2.5 V; I = 2 A; T =25 C 3240m GS D j V = 1.8 V; I = 1.5 A; T =25 C 3956m GS D j 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 12 V DS j V gate-source voltage (DC) - 8V GS I drain current (DC) T =25 C; V = 4.5 V; Figure 2 and 3 - 5.7 A D sp GS T =70 C; V = 4.5 V; Figure 2 - 4.5 A sp GS I peak drain current T =25 C; pulsed; t 10 s; Figure 3 - 22.9 A DM sp p P total power dissipation T =25 C; Figure 1 - 1.75 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 1.45 A S sp 9397 750 10191 Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 27 September 2002 2 of 12