X-On Electronics has gained recognition as a prominent supplier of PMN34UP MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMN34UP MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMN34UP NXP

PMN34UP electronic component of NXP
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Part No.PMN34UP
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET, P CH, 20V, 5A, SOT457
Datasheet: PMN34UP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2608 ea
Line Total: USD 0.26 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2608
25 : USD 0.2449
100 : USD 0.2041
250 : USD 0.1837

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PMN34UP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMN34UP and other electronic components in the MOSFETs category and beyond.

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PMN34UP 20 V, 5 A P-channel Trench MOSFET Rev. 1 9 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V R rated Trench MOSFET technology DSon Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---5 A D GS amb Static characteristics R drain-source on-state V =-4.5V I =-2.4A T = 25 C - 34 40 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 6 5 4 2 D drain 3 G gate G 4S source 132 S 5 D drain SOT457 (TSOP6) 017aaa094 6 D drain SOT457PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN34UP TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN34UP ZY 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - -20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =-4.5 V T =25C --5 A D GS amb 1 V =-4.5 V T =100 C --3.1 A GS amb I peak drain current T = 25 C single pulse t 10 s - -20 A DM amb p 2 P total power dissipation T =25C - 540 mW tot amb 1 - 1385 mW T = 25 C - 6250 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C --1.5 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMN34UP All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 9 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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