PMN35EN NXP

PMN35EN 30 V, 5.1 A N-channel Trench MOSFET Rev. 1 20 July 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --30 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C --5.1 A D GS amb Static characteristics R drain-source on-state V =10V I =5.1 A T = 25 C - 25 31 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate G 4S source 132 mbb076 S 5 D drain SOT457 (TSOP6) 6 D drain SOT457PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN35EN TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN35EN SH 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - 30 V DS j V gate-source voltage -20 20 V GS 1 I drain current V =10V T =25C -5.1 A D GS amb 1 V =10V T = 100 C -3.2 A GS amb I peak drain current T = 25 C single pulse t 10 s - 24 A DM amb p 2 P total power dissipation T =25C - 500 mW tot amb 1 - 1250 mW T = 25 C - 4170 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C -1.3 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMN35EN All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 20 July 2011 2 of 15